用LDMOS造句子，“LDMOS”造句

The Research of LDMOS Microwave Wideband Power Amplifier in L-Band

The research of LDMOS current characteristic involves the linear current region, cut-off saturation region, quasi-saturation region and providing the simplified analytical expression.

LDMOS电流特*的研究涉及了器件电流线*区、夹断饱和区和准饱和区，并给出了简化的电流特*解析表达式。

Integrated high voltage LDMOS on SIMOX Wafer

Analytical Models of LDMOS Based on Numerical Simulation;

采用tone负载牵引法得到了LDMOS晶体管MRF输入和输出阻抗

对于隔离的LDMOS器件，横向隔离壁(32)(结合至源极)与埋层(24)之间的电阻减少，从而减少了衬底注入电流。

Research on Reliability and Temperature Characteristic of LDMOS;

For isolated LDMOS devices, the resistance between the lateral isolation wall (32) (tied to the source) and the buried layer (24) is reduced, thereby reducing substrate injection current.

Breakdown Voltage and ESD Protection of RF-LDMOS;

The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.

Extraction of the LDMOS Transistor's Shunt Capacitance and Design of Class-E Power Amplifiers

二百该模型考虑了载流子的速度饱和现象和寄生双极*晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。

Research and Design of High Voltage RESURF-LDMOS;