用LDMOS造句子，“LDMOS”造句

The Research of LDMOS Microwave Wideband Power Amplifier in L-Band

The research of LDMOS current characteristic involves the linear current region, cut-off saturation region, quasi-saturation region and providing the simplified analytical expression.

LDMOS電流特*的研究涉及了器件電流線*區、夾斷飽和區和準飽和區，並給出了簡化的電流特*解析表達式。

Integrated high voltage LDMOS on SIMOX Wafer

Analytical Models of LDMOS Based on Numerical Simulation;

採用tone負載牽引法得到了LDMOS晶體管MRF輸入和輸出阻抗

對於隔離的LDMOS器件，橫向隔離壁(32)(結合至源極)與埋層(24)之間的電阻減少，從而減少了襯底注入電流。

Research on Reliability and Temperature Characteristic of LDMOS;

For isolated LDMOS devices, the resistance between the lateral isolation wall (32) (tied to the source) and the buried layer (24) is reduced, thereby reducing substrate injection current.

Breakdown Voltage and ESD Protection of RF-LDMOS;

The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.

Extraction of the LDMOS Transistor's Shunt Capacitance and Design of Class-E Power Amplifiers

二百該模型考慮了載流子的速度飽和現象和寄生雙極*晶體管的影響，獲得了開態下LDMOS漂移區中的電場分佈。

Research and Design of High Voltage RESURF-LDMOS;